GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz

General Description The HMC322 is a broadband non-refl ective GaAs MESFET SP8T switch chip. Covering DC to 10 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP8T switch product line. This switch also includes an on board binary decode

Telecom Infrastructure

General Description The HMC322 is a broadband non-refl ective GaAs MESFET SP8T switch chip. Covering DC to 10 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP8T switch product line. This switch also includes an on board binary decode

HMC322/HMC322ALP4E/HMC322LP4SP8T非反射开关芯片，采用SMT封装，DC至10.0 GHz

HMC322是一款宽度非反射GaAs MESFET SP8T开关芯片，采用低成本无引脚表贴封装。 该开关频率范围为DC至10 GHz，具有高隔离和低插入损耗，并扩展了SP8T开关产品线的频率覆盖范围。 该开关还集成了片内二进制解码电路，将所需逻辑控制线减至三条。 该开关采用0/-5 V负控制电压工作，所需固定偏置为-5 V。 所有数据均通过50 Ω测试夹具中的芯片测试，通过直径为0.025 mm (1 mil)、长度为0.5 mm (20 mils)的焊线连接。 该开关适用于50 Ω或75 Ω系统。 \n\n应用 \n\n• 电信基础设施 \n\n• 微波无线电和VSAT \n\n• 军事与太 • 宽带性能： DC至10 GHz \n\n• 高隔离度： >38 dB (4 GHz)；>30 dB (6 GHz) \n\n• 低插入损耗： 2 dB (4 GHz)；2.4 dB (6 GHz);

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz

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GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz

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GaAs MMIC SP8T非反射式开关，DC - 8 GHz

HMC322ALP4E是一款宽带非反射GaAs MESFET SP8T开关，采用低成本无引脚表贴封装。 该开关频率范围为DC至8 GHz，具有高隔离和低插入损耗。 该开关还集成了片内二进制解码电路，将所需逻辑控制线减至三条。 该开关采用0/-5V负控制电压工作，所需固定偏置为-5V。 该开关适用于50欧姆或75欧姆系统。 • 宽带性能： DC - 8.0 GHz\n\n• 高隔离度： >30 dB@ 6 GHz\n\n• 低插入损耗: 2.4 dB@ 6 GHz;

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz

General Description The HMC322LP4 & HMC322LP4E are broadband non-refl ective GaAs MESFET SP8T switches in low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit whic

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz

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GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz

文件：176.36 Kbytes Page：6 Pages

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz

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封装/外壳：24-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SP8T 24QFN RF/IF，射频/中频和 RFID 射频开关

封装/外壳：24-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC RF SWITCH SP8T 8GHZ 24QFN RF/IF，射频/中频和 RFID 射频开关

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz

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GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz

文件：361.48 Kbytes Page：6 Pages

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz

文件：277.5 Kbytes Page：6 Pages

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz

文件：361.48 Kbytes Page：6 Pages

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz

文件：277.5 Kbytes Page：6 Pages

GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz

文件：277.5 Kbytes Page：6 Pages

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 1600 V Mean forward current 740 A Surge current 11 kA

Silicon NPN Transistor RF Power Output

Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Output Powe

0.3 inch ( 7.62 mm ) DUAL DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVD-322/323 is 0.3 inch ( 7.62 mm ) height dual digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. High efficirncy red display has red face and red segment. Bringht red ,green, yellen and red orange displays have black face and white s

Precision Timers

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2.0 mm Series

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