GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz

General Description The HMC315 & HMC315E are ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi ers that operate from a single positive supply. The surface mount SOT26 amplifi er can be used as a broadband gain stage, or used with external matching for optimized n

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31 series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum