GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz

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GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

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MMIC low noise amplifier 18- 32 GHz

GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

文件：152.62 Kbytes Page：6 Pages

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

1036- 횞 1010-pixel ccd image sensor

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Low Dropout 1 Ampere Linear Regulator Family

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Low Dropout 1 Ampere Linear Regulator Family

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