GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

Features Excellent Noise Figure: 2 dB Gain: 22 dB Single Supply: +3V @ 58 mA Small Size: 2.48 x 1.33 x 0.1 mm Typical Applications The HMC263 is ideal for: • Millimeterwave Point-to-Point Radios • LMDS • VSAT • SATCOM

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

Millimeterwave Point-to-Point Radios

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GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

低噪声放大器芯片，24 - 36 GHz

HMC263芯片是一款GaAs MMIC低噪声放大器(LNA)，工作频率范围为24至36 GHz。 由于尺寸较小(3.29 mm²)，该芯片可轻松集成到多芯片模块(MCM)中。 该芯片采用GaAs PHEMT工艺制造而成，采用3 V (58 mA)单个偏置电源时提供22 dB增益，噪声系数为2 dB。 所有数据均通过50 Ω测试夹具中的芯片获取，通过直径为0.076 mm (3 mil)、最小长度为0.31 mm (<12 mils)的焊线连接。 HMC263可配合HMC264或HMC265混频器使用，以实现毫米波系统接收机。 \n\n 应用 \n\n 毫米波点对点无线电 • 出色的噪声系数： 2 dB \n\n• 增益： 22 dB \n\n• 单电源： +3V (58 mA) \n\n• 小尺寸： 2.48 x 1.33 x 0.1 mm;

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

低噪声放大器，采用SMT封装，24 - 36 GHz

HMC263LP4E是一款GaAs MMIC低噪声放大器(LNA)，工作频率范围为24至36 GHz，采用无引脚SMT塑料封装。 HMC263LP4E采用GaAs pHEMT工艺制造而成，采用3 V (58 mA)单个偏置电源时提供20 dB增益，噪声系数为2.2 dB。HMC263LP4E可配合HMC264LC3B或HMC265LM3混频器使用，以实现毫米波系统接收机。 隔直RF I/O匹配至50 Ω，无需外部元件。 \n\n 应用 \n\n 毫米波点对点无线电 LMDS VSAT SATCOM • 低噪声系数： 2.2 dB \n\n• 高增益： 20 dB \n\n• 单正电源： +3V或+5V \n\n• 隔直RF I/O \n\n• 无需外部匹配 \n\n• 24引脚4x4mm QFN封装： 16mm²;

GaAs MMIC LOW NOISE AMPLIFIER

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

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GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：272.6 Kbytes Page：8 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：272.6 Kbytes Page：8 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：963.91 Kbytes Page：8 Pages

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

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