GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

Features Excellent Noise Figure: 2 dB Gain: 22 dB Single Supply: +3V @ 58 mA Small Size: 2.48 x 1.33 x 0.1 mm Typical Applications The HMC263 is ideal for: • Millimeterwave Point-to-Point Radios • LMDS • VSAT • SATCOM

Millimeterwave Point-to-Point Radios

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GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a sing

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise f g

低噪声放大器芯片，24 - 36 GHz

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

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GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：963.91 Kbytes Page：8 Pages

低噪声放大器，采用SMT封装，24 - 36 GHz

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：272.6 Kbytes Page：8 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz

文件：963.91 Kbytes Page：8 Pages

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

Axial Lead and Cartridge Fuses - Subminiature

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Class H/K, J and R ferrule and blade fuse reducers

文件：547.66 Kbytes Page：2 Pages

3M??Lapping Film Aluminum Oxide 254X

文件：68.76 Kbytes Page：2 Pages