GaAs MMIC HIGH-ISOLATION

General Description The HMC132 chip is a fast, broadband SPDT switch featuring high (40 dB) isolation over the entire band, provided by on-chip ground vias. The switch is non-reflective at both the RF1 and RF2 ports. A negative control voltage of 0 / -5 Vdc to 0 / -7 Vdc controls the channel sele

GaAS MMIC SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ

General Description The HMC132C8 is a surface mount, low cost, non-hermetic packaged version of the HMC132G7 MMIC SPDT switch. The device is a fast, broadband SPDT switch featuring high (> 40 dB) isolation over the entire band. The switch is nonreflective at both the RF1 and RF2 ports. Features

GAAS MMIC HIGH - ISOLATION SPDT SWITCH DC - 6 GHZ

General Description The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads c

GAAS MMIC HIGH - ISOLATION SPDT SWITCH DC - 6 GHZ

General Description The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads c

GaAs MMIC SMT HIGH-ISOLATION SPDT SWITCH, DC - 8 GHz

文件：135.43 Kbytes Page：6 Pages

GaAS MMIC SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ

GaAs MMIC SMT HIGH-ISOLATION SPDT SWITCH, DC - 8 GHz

文件：135.43 Kbytes Page：6 Pages

GAAS MMIC HIGH - ISOLATION SPDT SWITCH DC - 6 GHZ

GaAs MMIC HIGH-ISOLATION SPDT SWITCH, DC - 6 GHz

文件：85.16 Kbytes Page：4 Pages

GaAs MMIC HIGH-ISOLATION SPDT SWITCH, DC - 6 GHz

文件：85.16 Kbytes Page：4 Pages

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava