GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

General Description The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifi er die which operates between 1 and 12 GHz. The amplifi er provides 17 dB of gain, 1.5 dB noise fi gure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.

ACTIVE BIAS CONTROLLER

General Description HMC981 is an active bias controller that automatically adjusts the gate voltage of an external amplifier to achieve constant bias current. It can be used to bias any enhancement and depletion type amplifiers operating in Class-A regime with Drain voltages from 4V to 12V and dr

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

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Active Bias Controller High Current

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Surveillance Systems

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封装/外壳：模具 包装：带 描述：IC RF AMP VSAT 1GHZ-12GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

文件：197.62 Kbytes Page：6 Pages

低噪声放大器芯片，1 - 12 GHz

封装/外壳：模具 包装：带 描述：IC AMP VSAT DBS 1GHZ-12GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Sanding

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Sanding

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Double Coated Tapes with Adhesive 300

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Guard ring for enhanced ruggedness and long term reliability

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