GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz

General Description The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 11.6 dB of gain at 10 GHz, 2.5 dB noise fi gure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V suppl

Wideband Communications Receivers

General Description The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 11.6 dB of gain at 10 GHz, 2.5 dB noise fi gure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V suppl

封装/外壳：模具 包装：托盘 描述：IC RF AMP GP 2GHZ-20GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs HEMT MMIC WIDEBAND

文件：187.67 Kbytes Page：6 Pages

GaAs HEMT MMIC WIDEBAND

文件：187.67 Kbytes Page：6 Pages

封装/外壳：模具 包装：盒 描述：IC RF AMP GP 2GHZ-20GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

Details complets sur le site du fabricant:

Product Description Full details on the manufacturers website: IDEAL INDUSTRIES, INC

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.5/2.5 GHz UHF LO BUFFER AMPLIFIER

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co