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HMB价格
参考价格：￥28.1196
型号：HMB 品牌：BUSSMANN / EATON 备注：这里有HMB多少钱，2024年最近7天走势，今日出价，今日竞价，HMB批发/采购报价，HMB行情走势销售排行榜，HMB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HMB | HALF SIZE HIGH PERFORMANCE RELAYS 文件：86.01 Kbytes Page：2 Pages | MACOM Tyco Electronics |  |   |
HMB | HALF SIZE HIGH PERFORMANCE RELAYS 文件：101.12 Kbytes Page：3 Pages | MACOM Tyco Electronics | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | | |
Compute Blade for HTCA-6000 Series Based on 4th Generation Intel® Xeon® Scalable Processors (Sapphire Rapids) Features •Hotswappablex86computeblade •Supportdual4thGenerationIntel®Xeon®ScalableProcessors (codenamedSapphireRapids)andEmmitsburgPCH •DDR54800MHzREGDIMM,16x288pinDIMMSocket,LRDIMM 1024GB(16x64GB)perM/Btray •Built-inIntelQuickAssistTechnology(QAT) •4 | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 |  | | |
Compute Blade for HTCA-6000 Series Based on 4th Generation Intel® Xeon® Scalable Processors (Sapphire Rapids) Features •Hotswappablex86computeblade •Supportdual4thGenerationIntel®Xeon®ScalableProcessors (codenamedSapphireRapids)andEmmitsburgPCH •DDR54800MHzREGDIMM,16x288pinDIMMSocket,LRDIMM 1024GB(16x64GB)perM/Btray •Built-inIntelQuickAssistTechnology(QAT) •4 | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
Compute Blade for HTCA-6000 Series Based on 4th Generation Intel® Xeon® Scalable Processors (Sapphire Rapids) Features •Hotswappablex86computeblade •Supportdual4thGenerationIntel®Xeon®ScalableProcessors (codenamedSapphireRapids)andEmmitsburgPCH •DDR54800MHzREGDIMM,16x288pinDIMMSocket,LRDIMM 1024GB(16x64GB)perM/Btray •Built-inIntelQuickAssistTechnology(QAT) •4 | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | | |
SINGLE-PHASE GLASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 100 to 1000 Volts CURRENT 0.8 Ampere FEATURES *Surgeoverloadrating-30amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Higheffciencyrectifier | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | | |
General purpose diodes fabricated in planar technology Description TheHMBD2003CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.200V Repetitivepe | HSMC 华昕 |  | | |
General purpose diodes fabricated in planar technology Description TheHMBD2003CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.200V Repetitivepe | HSMC 华昕 | | | |
General purpose diodes fabricated in planar technology Description TheHMBD2003CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.200V Repetitivepe | HSMC 华昕 | | | |
General purpose diodes fabricated in planar tehnology Description TheHMBD2004CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.240V Repetitivepe | HSMC 华昕 | | | |
General purpose diodes fabricated in planar tehnology Description TheHMBD2004CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.240V Repetitivepe | HSMC 华昕 | | | |
General purpose diodes fabricated in planar tehnology Description TheHMBD2004CSaregeneralpurposediodesfabricatedinplanartechnology,andencapsulatedinsmallplasticSMDSOT-23package. Features •SmallplasticSMDpackage •Switchingspeed:max.50nS •Generalapplication: Continuousreversevoltage:Max.240V Repetitivepe | HSMC 华昕 | | | |
HIGH-SPEED SWITCHING DIODE Description TheHMBD4148isdesignedforhigh-speedswitchingapplicationinhybridthick-andthin-filmcircuits.Thedevicesismanufacturedbythesiliconepitaxialplanarprocessandpackedinplasticsurfacemountpackage. Features •SmallSMDPackage(SOT-23) •Ultra-highSpeed •LowFor | HSMC 华昕 | | | |
HIGH-SPEED SWITCHING DIODE Description TheHMBD914isdesignedforhigh-speedswitchingapplicationinhybridthick-andthin-filmcircuits.Thedeviceismanufacturedbythesiliconepitaxialplanarprocessandpackedinplasticsurfacemountpackage. Features •SmallSMDPackage(SOT-23) •Ultra-highSpeed •LowForwa | HSMC 华昕 | | | |
1U Compute Sled for HTCA-E400 Features •Support3rdGenIntelXeonScalableProcessor(codenamedIcelake) •FrontAccessI/O:Storagebaysx2,PCIex1,NICslotx1,mini-DPport VGAsignal),LOMandUSB3.0ports •SupportFHHLPCIeby16card •SupportOCPNIC3.0Modules •CompatiblewithHTCA-E400Series | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
1U Compute Sled for HTCA-E400 Features •Support3rdGenIntelXeonScalableProcessor(codenamedIcelake) •FrontAccessI/O:Storagebaysx2,PCIex1,NICslotx1,mini-DPport VGAsignal),LOMandUSB3.0ports •SupportFHHLPCIeby16card •SupportOCPNIC3.0Modules •CompatiblewithHTCA-E400Series | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
Carrier-grade Edge Server Chassis for Open RAN / MEC Features •Carrier-grade,fullredundancyandextremehighperformance •3rdGenerationIntel®Xeon®ScalableProcessorwithAIAcceleration •Support5x1Ucomputesledsor2x2U+1Ucomputesleds •Support2x1Uswitchsledsforredundancy •SupportOCPNIC3.0Modules,2UsledSupportFH3/4 | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
2U Compute Sled for HTCA-E400 Features •Support3rdGenIntelXeonScalableProcessor(codenamedIcelake) •FrontAccessI/O:Storagebaysx4,PCIex1,NICslotx1,mini-DPport (VGAsignal),LOMandUSB3.0ports •SupportFH3/4LdoublewidthorsinglewidthPCIeCard •SupportOCPNIC3.0Modules •CompatiblewithHT | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
2U Compute Sled for HTCA-E400 Features •Support3rdGenIntelXeonScalableProcessor(codenamedIcelake) •FrontAccessI/O:Storagebaysx4,PCIex1,NICslotx1,mini-DPport (VGAsignal),LOMandUSB3.0ports •SupportFH3/4LdoublewidthorsinglewidthPCIeCard •SupportOCPNIC3.0Modules •CompatiblewithHT | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
Carrier-grade Edge Server Chassis for Open RAN / MEC Features •Carrier-grade,fullredundancyandextremehighperformance •3rdGenerationIntel®Xeon®ScalableProcessorwithAIAcceleration •Support5x1Ucomputesledsor2x2U+1Ucomputesleds •Support2x1Uswitchsledsforredundancy •SupportOCPNIC3.0Modules,2UsledSupportFH3/4 | LANNERLanner All Rights Reserved. 立华莱北京立华莱康平台科技有限公司 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT1015isdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplification. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT1815isdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplification. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT2222Aisdesignedforgeneralpurposeamplifierandhigh-speedswitching,medium-powerswitchingapplications. Features •Highfrequencycurrentgain •HighSpeedSwitching | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT2369isdesignedforgeneralpurposeswitchingandamplifierapplications. Features •LowCollectorSaturationVoltage •HighspeedswitchingTransistor | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description LowNoiseTransistor. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT28SisaNPNsilicontransistor,designedforuseingeneral-purposeSPEECHSYNTHSIZER(VoiceRom)ICaudiooutputdriverstageamplifierapplications. Features •ExcellenthFELinearity •HighDCCurrentGain •HighPowerDissipation | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT2907Aisdesignedforgeneralpurposeamplifierandhigh-speedswitching,mediumpowerswitchingapplications. Features •LowCollectorSaturationVoltage •HighSpeedSwitching •ForComplementaryUseWithNPNTypeHMBT2222A | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT2907Aisdesignedforgeneralpurposeamplifierandhigh-speedswitching,mediumpowerswitchingapplications. Features •LowCollectorSaturationVoltage •HighSpeedSwitching •ForComplementaryUseWithNPNTypeHMBT2222A | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT3904isdesignedforgeneralpurposeswitchingamplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT3906isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT4124isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT4125isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT4401isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT4403isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...........................................................................................-55~+150°C Junction | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT468isdesignedforgeneralpurposelowfrequencypoweramplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT5086isdesignedforlownoise,highgain,generalpurposeamplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT5087isdesignedforlownoise,highgain,generalpurposeamplifierapplications. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT5088isdesignedforlownoise,highgain,generalpurposeamplifierapplications. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT5089isdesignedforlownoise,highgain,generalpurposeamplifierapplications. | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •HighCollector-EmitterBreakdownVoltage(BVCEO=150V@IC=1mA) •ComplementstoNPNTypeHMBT5551 | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) Description TheHMBT5551isdesignedforgeneralpurposeapplicationsrequiringhighBreakdownVoltages. | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description DarlingtonTransistor | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description AmplifierTransistor | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT6517isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •HighCollector-EmitterBreakdownVoltage •LowCollector-EmitterSaturationVoltage •TheHMBT6517iscomplementarytoHMBT6520 | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT6520isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •HighCollector-EmitterBreakdownVoltage •LowCollector-EmitterSaturationVoltage •TheHMBT6520iscomplementarytoHMBT6517 | HSMC 华昕 | | | |
NPN EPITAXIAL TRANSISTOR Description TheHMBT8050isdesignedforgeneralpurposeamplifierapplications. Features •HighDCCurrenthFE=150-400atIC=150mA •ComplementarytoHMBT8550 | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description AmplifierTransistor | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description TheHMBT8550isdesignedforgeneralpurposeamplifierapplications. Features •HighDCCurrent:hFE=150-400atIC=150mA •ComplementarytoHMBT8050 | HSMC 华昕 | | | |
PNP EPITAXIAL PLANAR TRANSISTOR Description AmplifierTransistor | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features •HighTotalPowerDissipation(PD:225mW) •ComplementarytoHMBT9015 •HighhFEandGoodLinearity | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHMBT9018isdesignedforuseinVHF&UHFoscillatorsandVHFmixerintunerofaTVreceiver. Features •Highfrequency •Verylowcapacitance | HSMC 华昕 | | | |
NPN SILICON TRANSISTOR Description AmplifierTransistor AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...........................................................................................-55~+150°C JunctionTemperature.......................................................... | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description DarlingtonAmplifierTransistor | HSMC 华昕 | | | |
NPN EPITAXIAL PLANAR TRANSISTOR Description DarlingtonAmplifierTransistor | HSMC 华昕 | | | |
NPN EPITACIAL PLANAR TRANSISTOR Description HighVoltageTransistor | HSMC 华昕 | | |
HMB产品属性
- 类型
描述
- 型号
HMB
- 功能描述
环形推拉式连接器 FIXED RECEPTACLE NUT FIXING
- RoHS
否
- 制造商
Hirose Connector
- 产品类型
Connectors
- 系列
HR10
- 触点类型
Socket(Female)
- 外壳类型
Receptacle
- 触点数量
4
- 外壳大小
7
- 安装风格
Panel
- 端接类型
Solder
- 电流额定值
2 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROELECTRO |
23+ |
SOT22/ |
20000 |
全新原装假一赔十 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
MOT |
2020+ |
MSOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
力勤/Chenmko |
20+ |
MDS |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
HSMC |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
LION-TECH |
9152 |
2140 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
||||
ON |
23+ |
SOT23 |
20000 |
原厂原装正品现货 |
|||
ON |
23+ |
SOT-23 |
6680 |
全新原装优势 |
|||
ON |
04+ |
TO-23 |
2360 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
华晰 |
2016+ |
SOT23 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
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HMB规格书下载地址
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HMA121CR3-全间距微型扁平封装4针光耦合器HMA124，HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接，驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列，HMA2701系列，HMA124
2012-11-7
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