型号 功能描述 生产厂家&企业 LOGO 操作

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HCSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshigh

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MHighSpeedSRAM(512-kword횞8-bit)

文件:174.62 Kbytes Page:14 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

文件:3.04213 Mbytes Page:36 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI

HM628511HJP产品属性

  • 类型

    描述

  • 型号

    HM628511HJP

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    4M High Speed SRAM(512-kword x 8-bit)

更新时间:2025-8-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
3607
原装现货,当天可交货,原型号开票
HIT
23+
SOJ36
20000
全新原装假一赔十
HITACHI
11+
SOP-32
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HIT
01+
SOJ36
3560
全新原装进口自己库存优势
HIT
24+
SOJ
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
HITACHI/日立
2223+
SOJ36
26800
只做原装正品假一赔十为客户做到零风险
HIT
2023+
SOJ
50000
原装现货
HIT
23+
SOJ/36
7000
绝对全新原装!100%保质量特价!请放心订购!
HIT
24+
SOJ36
357
HIT
2022
SOJ
3000
全新原装现货

HM628511HJP芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • RENCO
  • SEI
  • TAI-SAW
  • ZFSWITCHES

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