型号 功能描述 生产厂家&企业 LOGO 操作
HM628128A

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

1MSRAM(128-kwordx8-bit)

131072-wordx8-bitHighSpeedCMOSStaticRAM TheHitachiHM628128isaCMOSstaticRAMorganized128-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

131,072-wordX8-bitHighSpeedCMOSStaticRAM

TheHitachiHM628128AisaCMOSstaticRAMorganized128kword×8bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Itofferslowpowerstandbypowerdissipation;therefore,itissuitableforbatteryback-upsystems.

HitachiHitachi, Ltd.

日立公司

Hitachi

1MSRAM(128-KWORDX8BIT)

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

HitachiHitachi, Ltd.

日立公司

Hitachi

1MSRAM(128-kwordX8-bit)

Description TheHitachiHM628128DISeriesis1-MbitstaticRAMorganized131,072-kword×8-bit.HM628128DISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628128DISeriesofferslowpowerstandbypowerdissipation;th

HitachiHitachi, Ltd.

日立公司

Hitachi

131072-wordx8-bitHighSpeedCMOSStaticRAM

131072-wordx8-bitHighSpeedCMOSStaticRAM TheHitachiHM628128isaCMOSstaticRAMorganized128-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

HM628128A产品属性

  • 类型

    描述

  • 型号

    HM628128A

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    131,072-word X 8-bit High Speed CMOS Static RAM

更新时间:2024-6-8 18:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
2020+
DIP-32
16800
绝对原装进口现货,假一赔十,价格优势!?
HIT
20+
SMD
200
英卓尔科技,进口原装现货!
HITACHI
23+
65480
23+
DIP32
20474
专注原装正品现货特价中量大可定
TOSHIBA
95+
DIP32
3560
全新原装进口自己库存优势
HIT
23+
QFP
3200
全新原装、诚信经营、公司现货销售
HITREND
94+
DIP
880000
明嘉莱只做原装正品现货
HITACHI
23+
NA
312
专做原装正品,假一罚百!
HITREND
21+
DIP
5000
全新原装现货 价格优势
HITACHI
99+
DIP-32
35
一级代理,专注军工、汽车、医疗、工业、新能源、电力

HM628128A芯片相关品牌

  • ATS
  • CTS
  • EMLSI
  • EXAR
  • FORMOSA
  • ISC
  • lyontek
  • MURATA-PS
  • PANJIT
  • Phoenix
  • SEME-LAB
  • SEMTECH

HM628128A数据表相关新闻

  • HM658128ALFP

    www.jskj-ic.com

    2021-9-9
  • HM50464P-12十年IC,只做原装

    HM50464P-12 十年IC,只做原装

    2020-10-22
  • HMC1040LP3CE 射频放大器 贸泽微优势

    HMC1040LP3CE射频放大器贸泽微优势

    2020-10-16
  • HM5905

    HM5905,全新原装当天发货或门市自取0755-82732291.

    2020-3-27
  • HM5116400CS6Z

    HM5116400CS6Z

    2019-11-1
  • HMA121CR3-全间距微型扁平封装4针光耦合器

    HMA121CR3-全间距微型扁平封装4针光耦合器HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列,HMA2701系列,HMA124

    2012-11-7