| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM50P03 | P-Channel Enhancement Mode Power MOSFET 文件：1.24973 Mbytes Page：7 Pages | HMSEMI 华之美半导体 |   | |
HM50P03 | P沟道 中压大电流MOS | HMPOWERSEMI 虹美功率 | | |
P沟道 中压大电流MOS | HMPOWERSEMI 虹美功率 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：502.28 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：1.04593 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.0229 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.02287 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：967.38 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HMSEMI |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
韩国三和SAMWHA |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
HIT |
25+ |
FDIP |
18000 |
原厂直接发货进口原装 |
|||
VBsemi |
24+ |
QFN |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBsemi |
21+ |
QFN |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HMSEMI |
22+ |
TO-252 |
20000 |
只做原装 |
|||
FOXCONN |
24+ |
CONNECTOR |
9600 |
原装现货,优势供应,支持实单! |
|||
HIT |
24+/25+ |
10 |
原装正品现货库存价优 |
||||
原装正品 |
23+ |
TO-252 |
18396 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
HM |
2022+ |
TO-252 |
32278 |
原厂代理 终端免费提供样品 |
HM50P03规格书下载地址
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DdatasheetPDF页码索引
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