NPN EPITAXIAL PLANAR TRANSISTOR

Description The HJ6718 is designed for general purpose medium power amplifier and switching . Features • High power: 1.2W • High current: 1A

NPN EPITAXIAL PLANAR TRANSISTOR

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 12 (65/30) AWG Tinned Copper 0.093 b) Insulation 0.012 Wall, Nom. MPPE 0.117+/- 0.002 (1) Print ALPHA WIRE ECOWIRE TM 12 AWG E163869-DB RU AWM 11028 105C 600V VW-1 --- CRU AWM I A/B 105C 600V FT1 CE ROHS (2) Color(s) WHITE, BLACK

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. - RoHS Compliant - Halogen Free Featur

Dual Output, 75 Ohm BNC Circuit Board Mount, White Valox Case

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Customer Specification

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