Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) • Low drive current • High speed switching • 2.5 V gate drive

20V, 3.8A, 55mmax. Silicon N Channel MOS FET Power Switching

Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) • Low drive current • High speed switching • 2.5 V gate drive

20V, 3.8A, 55m?뾪ax. Silicon N Channel MOS FET Power Switching

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ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

Low Profile SMD LTE Chip Antenna

Features • Frequency Range: 698-960 / 1710-2690 MHz • Compact & Low-Profile • Peak Gain: 1.0 / 5.9 dBi • Efficiency: 66 % / 80 % • Surface Mount (SMD)

Low Profile SMD LTE Chip Antenna

Features • Frequency Range: 698-960 / 1710-2690 MHz • Compact & Low-Profile • Peak Gain: 1.0 / 5.9 dBi • Efficiency: 66 % / 80 % • Surface Mount (SMD)

HandyHex™ Adjustable Handle

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