Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive

20V, 4.5A, 39mmax. Silicon N Channel MOS FET Power Switching

Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive

20V, 4.5A, 39m?뾪ax. Silicon N Channel MOS FET Power Switching

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Surface-Mount Ceramic Multilayer Capacitors

APPLICATIONS Consumer electronics, for example: - Tuners - Television receivers - Video recorders - All types of cameras - Mobile telephones FEATURES Supplied in tape on reel Nickel-barrier end termination RoHS compliant Halogen Free compliant

Surface Mount Multilayer Ceramic Capacitors

APPLICATIONS PCs, Hard disk, Game PCs Power supplies DVD players Mobile phones Data processing FEATURES Supplied in tape on reel Nickel-barrier end termination RoHS compliant Halogen free compliant

Aluminum Electrolytic Capacitors

文件：5.29445 Mbytes Page：66 Pages

Type CRG Series

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