NPN EPITAXIAL PLANAR TRANSISTOR

Description • Low frequency high voltage amplifier • Complementary pair with HI1109

Dual Port RAM

DESCRIPTION The DS1609 is a random access 256–byte dual port memory designed to connect two asyncronous address/data buses together with a common memory element. Both ports have unrestricted access to all 256 bytes of memory, and with modest system discipline no arbitration is required. Each port

NPN EPITAXIAL PLANAR TRANSISTOR

Description • Low frequency high voltage amplifier. • Complementary pair with HJ1109.

NPN EPITAXIAL PLANAR TRANSISTOR

Features • Low frequency high voltage amplifier • Complementary pair with HSB1109

Octal SMBus-to-Parallel I/O Expanders

General Description The MAX1608/MAX1609 provide remote input/output (I/O) expansion through an SMBus™ 2-wire serial interface. Each device has eight high-voltage open-drain outputs that double as TTL-level logic inputs, providing continuous bidirectional capabilities. The open-drain outputs

Integrated Circuit Instrumentation Timer

Description: The NTE1609 is a monolithic integrated circuit in a 7–Lead SIP type package consisting of a timer developed for use in measurement instrumentation, control equipment and digital data procesing equipment. This device is designed to require few externally connected components. F