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位置：首页 > IC中文资料第2375页 > HGTG30N60

HGTG30N60价格

参考价格：￥21.9023

型号：HGTG30N60A4 品牌：FAIRCHILD 备注：这里有HGTG30N60多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG30N60批发/采购报价，HGTG30N60行情走势销售排行榜，HGTG30N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HGTG30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60A4D

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60A4D

N-ChannelIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.6V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBT

60A,600V,UFSSeriesN-ChannelIGBT withAnti-ParallelHyperfastDiode TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60C3

63A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60C3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60C3D

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60C3D

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

HARRIS corporation

HARRIS
HGTG30N60C3D

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG30N60C3D

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Features •63A,600VatTC=25oC •TypicalFallTime...............230nsatTJ=150oC •ShortCircuitRating •LowConductionLoss •HyperfastAnti-ParallelDiode Packaging JEDECSTYLETO-247

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60C3D_V01

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Features •63A,600VatTC=25oC •TypicalFallTime...............230nsatTJ=150oC •ShortCircuitRating •LowConductionLoss •HyperfastAnti-ParallelDiode Packaging JEDECSTYLETO-247

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60A4D

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 463W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTG30N60B3

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 208W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG30N60B3D_04

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BIDW30N60T

BIDW30N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Inc.

伯恩斯（邦士）

Bourns
AIKW30N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

文件：1.9827 Mbytes Page：16 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
AR30N60

ACTIVE/SYNCHRONOUSRECTIFIER

文件：672.35 Kbytes Page：15 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
DAM30N60C

N-ChannelEnhancementModeMOSFET

文件：281.61 Kbytes Page：4 Pages

DACO

DACO

DACO
DAM30N60F

N-ChannelEnhancementModeMOSFET

文件：264.01 Kbytes Page：4 Pages

DACO

DACO

DACO

HGTG30N60产品属性

  • 类型

    描述

  • 型号

    HGTG30N60

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS Series

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

HGTG30N60供应商更多...

更新时间：2024-6-17 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
HGTG30N60A4D
TI
23+
NA
6500
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
HGTG30N60A4D
ON
2020+
TO247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市明嘉莱科技有限公司
HGTG30N60A4
FAIRCHILD/仙童
24+
TO3P
154634
明嘉莱只做原装正品现货
询价
中天科工半导体（深圳）有限公司
HGTG30N60A4D
原装
24+
标准
51884
热卖原装进口
询价
深圳市纳立科技有限公司
HGTG30N60A4D
三年内
1983
纳立只做原装正品13590203865
询价
深圳市弘扬芯城科技有限公司
HGTG30N60A4D
onsemi(安森美)
23+
TO247AC3
6000
诚信服务，绝对原装原盘
询价
深圳市凌旭科技有限公司
HGTG30N60A4
FAIRCHILD/仙童
21+
TO247
1709
询价
深圳市科恒伟业电子有限公司
HGTG30N60A4D
ON
22+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市中利达电子科技有限公司
HGTG30N60A4
ON/安森美
22+
TO-247
6000
只做原装,假一赔十
询价
深圳市赛能新源半导体有限公司
HGTG30N60A4D
ON
21+
TO247
56000
公司进口原装现货 批量特价支持
询价

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HGTG30N60规格书下载地址

HGTG30N60参数引脚图相关

HGTG30N60数据表相关新闻

DdatasheetPDF页码索引

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