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位置：首页 > IC中文资料第1835页 > HGTG20N60

HGTG20N60价格

参考价格：￥14.9168

型号：HGTG20N60A4D 品牌：FAIRCHILD 备注：这里有HGTG20N60多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG20N60批发/采购报价，HGTG20N60行情走势销售排行榜，HGTG20N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartrans

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartrans

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60A4D

SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode600V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTG20N60A4D

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.7V（Max)@IC=20A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Ultrafasttailcurrentshutoff ·AutomotiveChargers ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTG20N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：157.02 Kbytes Page：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60A4D_09

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：157.02 Kbytes Page：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTG20N60B3

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTG20N60B3D

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTG20N60C3R

40A,600V,RuggedUFSSeriesN-ChannelIGBTs

文件：107.72 Kbytes Page：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

IXYS
20N60

FastSwitching

文件：95.42 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

文件：1.15549 Mbytes Page：11 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
20N60A

20A600VN-channelenhancedfieldeffecttransistor

文件：833.85 Kbytes Page：6 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

HGTG20N60产品属性

  • 类型

    描述

  • 型号

    HGTG20N60

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS Series

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

HGTG20N60供应商更多...

更新时间：2024-6-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
HGTG20N60A4
onsemi(安森美)
23+
TO-247
1224
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
HGTG20N60A4D
FAIRCHILD/仙童
23+
NA/
1280
优势代理渠道,原装正品,可全系列订货开增值税票
询价
上海意淼电子科技有限公司
HGTG20N60A4D
FAI
23+
30一管
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
HGTG20N60A4D20N60A4D
FAIRCHI
2020+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市纳立科技有限公司
HGTG20N60A4D
三年内
1983
纳立只做原装正品13590203865
询价
中天科工半导体（深圳）有限公司
HGTG20N60A4D
仙童
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
深圳市明嘉莱科技有限公司
HGTG20N60A4
FAIRCHILD/仙童
24+
NA
860000
明嘉莱只做原装正品现货
询价
深圳市芯福林电子科技有限公司
HGTG20N60A4D
Fairchild/ON
21+
TO247
13880
公司只售原装,支持实单
询价
深圳市科芯源微电子有限公司
HGTG20N60A4D
FAIRCHILD/仙童
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市讯顺达科技有限公司
HGTG20N60A4D
ON
21+
TO-247
4500
全新原装公司现货
询价

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HGTG20N60规格书下载地址

HGTG20N60参数引脚图相关

HGTG20N60数据表相关新闻

DdatasheetPDF页码索引

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