位置：首页 > IC中文资料第1096页 > HGT4E20N60A4DS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT4E20N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar trans | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   |
HGT4E20N60A4DS产品属性
- 类型
描述
- 型号
HGT4E20N60A4DS
- 功能描述
IGBT 晶体管 TO-268
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO-268 |
21368 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
仙童/INTERS |
1822+ |
TO-247 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NS |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
Intersil |
24+ |
TO-247 |
8866 |
||||
TDK |
23+ |
SMD被动器件正迈科技 |
800000 |
绕线电感/电容电感磁珠系列样品可出支持批量1304306 |
|||
HAR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
INTERSIL |
05+ |
原厂原装 |
5810 |
只做全新原装真实现货供应 |
|||
INTERSIL |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
|||
HIGHGA |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
INTERSIL |
24+ |
TO-268 |
60000 |
HGT4E20N60A4DS芯片相关品牌
HGT4E20N60A4DS规格书下载地址
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HGT4E20N60A4DS数据表相关新闻
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DdatasheetPDF页码索引
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