13A, 1200V, NPT Series N-Channel IGBT

文件：498.55 Kbytes Page：9 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 1200V 13A 104W I2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 1200V 13A 104W I2PAK

13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state cond

13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

13A, 1200V, NPT Series N-Channel IGBT

文件：498.55 Kbytes Page：9 Pages

13A, 1200V, NPT Series N-Channel IGBT

12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state cond

12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low