型号 功能描述 生产厂家&企业 LOGO 操作
HGT1S12N60C3

24A, 600V, UFS Series N-Channel IGBTs

Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l

HARRIS

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately betwee

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately betwee

Intersil

24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Intersil

24A, 600V, UFS Series N-Channel IGBTs

Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l

HARRIS

24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGT1S12N60C3产品属性

  • 类型

    描述

  • 型号

    HGT1S12N60C3

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-8-10 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
4050
原装现货,当天可交货,原型号开票
FAIRCHILD/仙童
22+
TO-262
100000
代理渠道/只做原装/可含税
FAIRCHILD
24+
DIP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
FAIRCHILD
23+
DIP
999999
原装正品现货量大可订货
FAIRCHILD
25+23+
DIP
30011
绝对原装正品现货,全新深圳原装进口现货
FAIRCHILD
25+
TO-220
4500
全新原装、诚信经营、公司现货销售
Intersil
24+
TO-263
8866
FAIRCHI
21+
TO-220
12588
原装正品,自己库存 假一罚十
FAIRCHILD/仙童
25+
DIP
860000
明嘉莱只做原装正品现货
FAIRCHILD
19+
DIP
20000
1000

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