位置：首页 > IC中文资料第8461页 > HFS8N60S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HFS8N60S | 600V N-Channel MOSFET 文件：661.2 Kbytes Page：7 Pages | SEMIHOW |   | |
HFS8N60S | MOSFET | SEMIHOW | | |
isc N-Channel Mosfet Transistor ·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi | ISC 无锡固电 | | ||
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap | UTC 友顺 | | ||
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：217.21 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：473.72 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | ||
8A 600V N-channel Enhancement Mode Power MOSFET 文件：879.04 Kbytes Page：12 Pages | WXDH 东海半导体 | |
HFS8N60S产品属性
- 类型
描述
- 型号
HFS8N60S
- 制造商
SEMIHOW
- 制造商全称
SEMIHOW
- 功能描述
600V N-Channel MOSFET
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HFS8N60S数据表相关新闻
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2021-2-14HFD4/12-SR
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2021-2-14HGDESM021A
https://hch01.114ic.com/
2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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