| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF |   | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SMPS MOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
24+ |
NA/ |
10391 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2016+ |
TO252 |
5623 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
12+ |
TO-252 |
145 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飞凌全新特价IRFR13N20DTRPBF即刻询购立享优惠#长期有货 |
|||
IR |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
24+ |
TO-252 |
159978 |
明嘉莱只做原装正品现货 |
HFP13N20S规格书下载地址
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2021-2-14HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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