N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

900VN-ChannelMOSFET

FEATURES ❐OriginativeNewDesign ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐UnrivalledGateCharge:55nC(Typ.) ❐ExtendedSafeOperatingArea ❐LowerRDS(ON):1.12Ω(Typ.)@VGS=10V ❐

900VN-ChannelMOSFET

Features ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐100AvalancheTested ❐RoHSCompliant ❐Built-inESDDiode

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell9N90isathree-terminalsilicondevicewithcurrentconductioncapabilityof9A,fastswitchi

PowerMOSFET

DESCRIPTION TheUTC9N90usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)≤1.2Ω@VGS=10V,ID=4.5A *U

900VN-CHANNELMOSFET

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9A,900VN-CHANNELPOWERMOSFET

文件：255.65 Kbytes Page：6 Pages

9A900VN-CHANNELMOSFET

文件：178.3 Kbytes Page：7 Pages