N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

900V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 55 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V ❐

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900V N-Channel MOSFET

Features ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ 100 Avalanche Tested ❐ RoHS Compliant ❐ Built-in ESD Diode

MOSFET

Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

9A, 900V N-CHANNEL POWER MOSFET

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900V N-CHANNEL MOSFET

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9A900V N-CHANNEL MOSFET

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