Versatile Link The Versatile Fiber Optic Connection

Description The Versatile Link series is a complete family of fiber optic link components for applications requiring a low cost solution. The HFBR-0501 series includes transmitters, receivers, connectors and cable specified for easy design. Features • Low Cost Fiber Optic Components • Enhanced

12MBd Versatile Link 通用链接光接收器

HFBR-2525EZ 接收器结合 PIN 检测器和兼容 CMOS/TTL 逻辑的数字输出芯片。HFBR-1525EZ/HFBR-2525EZ 链路可在直流到 12MBd 速度工作，采用 1mm 塑料光纤 (POF) 时距离可达 50 米，采用 200μm 硬包层石英光纤 (HCS®) 时距离可达 500 米。使用建议电路时无最短链接距离限制，可简化设计。Versatile Link 通用链路组件可以采用多个互锁方式获取最小空间，并通过双工连接器提供双连接，单一印刷电路板可以容纳多达 8 个封装互锁。 ·符合 RoHS 标准\n·数据传输信号速度为直流到 12MBd\n·采用 1mm 塑料光纤 (POF) 时传输距离可达 50 米\n·采用 200μm 硬包层石英光纤 (HCS®) 时传输距离可达 500 米\n·广动态范围接收器允许单一发射器驱动电流下 0 到最大链接距离工作\n·提供不同温度、电源和光纤衰减条件链接距离\n·CMOS/TTL 兼容输出直流耦合接收器可简化设计，不需数据编码或数字化电路\n·脉宽失真 (PWD) 控制可限制低占空比或爆发模式数据失真\n·高噪声抗扰度\n·兼容 Broadcom 的 Versatile Link 通用链路系列连接器，易于实现光纤终端\n·如有;

包装：管件 描述：RCVR OPTICAL 10MBD 光电器件 光纤 - 接收器

包装：散装 描述：RCVR OPTICAL 10MBD 光电器件 光纤 - 接收器

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i