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HERF1002G

Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers

文件:75.3 Kbytes Page:2 Pages

TSC

台湾半导体

HERF1002G

10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers

文件:187.69 Kbytes Page:2 Pages

TSC

台湾半导体

HERF1002G

Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers

文件:344.01 Kbytes Page:2 Pages

TSC

台湾半导体

HERF1002G

10.0 Ampere Insulated Dual Common Cathode High Efficiency Rectifiers

文件:668.93 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

HERF1002G

10Ampere Insulated Dual Common Cathode High Efficiency Rectifiers

文件:645.88 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

HERF1002G

50ns, 10A, 100V, High Efficient Recovery Rectifier

TSC

台湾半导体

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE ARRAY GP 100V ITO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

10Ampere Insulated Dual Common Anode High Efficiency Rectifiers

文件:641.35 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

10.0 Ampere Insulated Dual Common Anode High Efficiency Rectifiers

文件:648.89 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

10Ampere Insulated Dual Doubler Polarity High Efficiency Rectifiers

文件:641.52 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

10Ampere Insulated Dual Series Connection High Efficiency Rectifiers

文件:641.67 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

PANJIT

強茂

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp

NTE

HERF1002G产品属性

  • 类型

    描述

  • trr (ns):

    50

  • VRRM (V):

    100

  • IF(AV) (A):

    10

  • IFSM (A):

    125

  • Technology:

    GPP

  • IR (µA):

    10

  • VF (V):

    1

  • Status:

    Active

  • AEC-Q:

    Yes

  • TJ Max. (°C):

    150

  • Family:

    High Efficient

  • MSL:

    NA

更新时间:2026-8-2 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC/台湾半导体
23+
TO-220
50000
全新原装正品现货,支持订货
TSC
24+
TO-220F
10000
只做原装正品现货 欢迎来电查询15919825718
TAIWAN
23+
TO-220
25000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TSC
23+
TO-220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
TSC
23+
TO-220
50000
全新原装正品现货,支持订货
TSC/台湾半导体
26+
TO-220
43600
全新原装现货,假一赔十
TSC
13+
TO-220
324
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TSC
25+23+
TO-220
26069
绝对原装正品全新进口深圳现货
TSC
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
TSC
19+
TO-220
28
全新 发货1-2天

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