GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 8.0 Amperes Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame Retardant Epoxy Molding Compound • Low power loss,

HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS

HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes FEATURES ●Low switching noise ●Lowforward voltage drop ●Lowthermal resistance ●High current capability ●Highfast switching capability ●High surge capacity

8A 1000V Fast recovery diode

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HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER DIODES

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High Efficiency Glass Passivated Rectifiers

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HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS

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HIGH EFFICIENCY RECTIFIER VOLTAGE 1000 Volts CURRENT 8.0 Amperes

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GLASS PASSIVATED HIGH EFFICENCY RECTIFIER

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8.0 AMPS. Glass Passivated High Efficient Rectifiers

8.0 AMPS. Glass Passivated High Efficient Rectifiers Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free wheeling, and polari

8.0 AMPS. Glass Passivated High Efficient Rectifiers

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SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)