8.0 AMPS. Glass Passivated High Efficient Rectifiers

8.0 AMPS. Glass Passivated High Efficient Rectifiers Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free wheeling, and polari

FRD芯片

• 先进的Photo Glass工艺，从技术上提升了芯片的可靠性。\n\n• 玻璃、Sipos (半绝缘多晶硅）、LTO (低温氧化膜）三层钝化保护，显著提升了芯片的抗高温能力以及封装良率。\n\n• 快速的TRR分布。\n\n• 有竞争性的成本及价格。

8.0 AMPS. Glass Passivated High Efficient Rectifiers

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HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

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Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)