| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MTP50N06V |
25+ |
15 |
15 |
||||
MOTOROLA |
2025+ |
TO220 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
23+ |
TO-220 |
15500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
||||
N/A |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
IR |
TO-220 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
24+ |
TO 220 |
161577 |
明嘉莱只做原装正品现货 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
MOTOROLA/摩托罗拉 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
HEP50N06芯片相关品牌
HEP50N06规格书下载地址
HEP50N06参数引脚图相关
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HEP50N06数据表相关新闻
HF115F/024-1HS3
HF115F/024-1HS3,当天发货0755-82732291全新原装现货或门市自取.
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随时可发货
2019-9-17HEF4752V-A.C.电机控制电路
HEF4752V是A.C.电路电机的转速控制利用LOCMOS技术。电路综合其中三个120 °相位信号,平均电压随时间变化的正弦频率范围为0到200赫兹。该方法是基于脉宽调制原理,以实现足够的精度,输出电压在整个频率范围。一个是纯数字波形产生使用。所有输出的推拉型。输入和输出各种各样的保护,防止静电的效果设备的处理情况。然而,要完全安全的,它是宜采取处理考虑采取必要的防范措施的。
2012-12-5
DdatasheetPDF页码索引
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