位置:首页 > IC中文资料第10331页 > HEM401B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEM401B | Broadband Amplifier 文件:81.11 Kbytes Page:1 Pages | BOWEI 博威集成电路 | ||
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs | PANJIT 強茂 | |||
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res | POLYFET | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 |
HEM401B产品属性
- 类型
描述
- 型号
HEM401B
- 制造商
BOWEI
- 制造商全称
BOWEI
- 功能描述
Broadband Amplifier
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2012-12-5
DdatasheetPDF页码索引
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