Voltage Variable Attenuators

文件：82.82 Kbytes Page：1 Pages

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800–960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Ga

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800–960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Ga

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor