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HDM9160

Frequency Synthesizer

文件:156.86 Kbytes Page:5 Pages

SHOULDER

好达电子

30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with

INTERSIL

30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with

INTERSIL

40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with

INTERSIL

40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with

INTERSIL

PAL/NTSC/SECAM decoder/sync processor

文件:220.08 Kbytes Page:27 Pages

PHILIPS

飞利浦

HDM9160产品属性

  • 类型

    描述

  • 型号

    HDM9160

  • 制造商

    SHOULDER

  • 制造商全称

    SHOULDER

  • 功能描述

    Frequency Synthesizer

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