| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
N/A |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO 220 |
161577 |
明嘉莱只做原装正品现货 |
|||
MTP50N06V |
25+ |
15 |
15 |
||||
MOTOROLA |
2025+ |
TO220 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
23+ |
TO-220 |
15500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
||||
MOT |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
IR |
TO-220 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MOTOROLA/摩托罗拉 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
HD50N06D芯片相关品牌
HD50N06D规格书下载地址
HD50N06D参数引脚图相关
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HD50N06D数据表相关新闻
HD63266F
HD63266F
2023-6-30HD3SS3220IRNHT
公司原装正品 现货库存 价格优势
2022-4-21HD3SS3412RUAR
Switch - PCIe 4 Port 4 Lane PCI接口IC , Bridge - PCIe to PCI 1 Lane PCI接口IC , Bridge - PCIe to USB 2.0 4 Port PCI接口IC , PCIe PCI接口IC , HTQFP-128 PCI接口IC , 3 Port PCI接口IC
2020-7-31HD3SS3412RUAT
Switch - PCIe 4 Port 4 Lane PCI接口IC , Bridge - PCIe to USB 2.0 PCI接口IC , - 40 C 24 Lane PCI接口IC , Bridge - PCIe to PCI 1 Lane PCI接口IC , Switch - PCIe 4 Port 4 Lane PCI接口IC , 3 Port 4 Lane PCI接口IC
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HD642339VFC25V,全新原装当天发货或门市自取0755-82732291.
2019-8-24
DdatasheetPDF页码索引
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