HIGH-FREQ ALUMINUM ELECTROLYTIC

文件：14.44 Kbytes Page：1 Pages

HIGH-FREQ ALUMINUM ELECTROLYTIC

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：65.68 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：65.68 Kbytes Page：4 Pages