丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

丝印代码：HC165EP；SN74HC165B-EP Enhanced Product, 5-V, Parallel-Load 8-Bit Shift Registers

1 Features • 2 V to 6 V VCC operation • Latch-up performance exceeds 250 mA per JESD 17 • Operating ambient temperature: -55°C to +125°C • Supports defense, aerospace, and medical applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product l

3A POWER OPERATIONAL AMPLIFIER

DESCRIPTION The L165 is a monolithic integrated circuit in Pen tawatt® package, intended for use as power operational amplifier in a wide range of applications, including servo amplifiers and power supplies. The high gain and high output power capability provide superiore performance wherever a

3A POWER OPERATIONAL AMPLIFIER

DESCRIPTION The L165 is a monolithic integrated circuit in Pen tawatt® package, intended for use as power operational amplifier in a wide range of applications, including servo amplifiers and power supplies. The high gain and high output power capability provide superiore performance wherever a

Silicon epitaxial planar type

For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon MOS IC

Silicon NPN Transistor TV Horizontal Output

Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: • High Voltage • High Power • High Switching Speed • Good Stability Applications: • Consumer • Power Supply • Color TV