中低压MOS（20-150V）

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.1 Kbytes Page：2 Pages