丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr

丝印代码：HB125Q；SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E

丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

丝印代码：HB125Q；SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E

丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12