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HB12价格
参考价格：￥18.4757
型号：HB120MFZRE 品牌：TE 备注：这里有HB12多少钱，2026年最近7天走势，今日出价，今日竞价，HB12批发/采购报价，HB12行情走势销售排行榜，HB12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：HB125Q；SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E | TI 德州仪器 |   | ||
丝印代码：HB126Q；SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs 1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB125Q；SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E | TI 德州仪器 | | ||
丝印代码：HB125；SNx4AHCT125 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • Eliminate slow or noisy input signals 3 Description The ’AHCT125 devices are quadr | TI 德州仪器 | | ||
丝印代码：HB126；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted. | TI 德州仪器 | | ||
丝印代码：HB126；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted. | TI 德州仪器 | | ||
丝印代码：HB126；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs 1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted. | TI 德州仪器 | | ||
丝印代码：HB126EP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB126EP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB126Q；SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs 1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr | TI 德州仪器 | | ||
丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB126EP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB125EP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
丝印代码：HB126EP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho | TI 德州仪器 | | ||
Linear Power Supplies Data Sheet Description Power-One produces the industry’s broadest selection of Linear power supplies with output voltages from 5 volts through 250 volts. Rugged technology and proven design merge to create quiet, highly-regulated, dependable DC power. The Linear power supplies are approved to domestic and | POWER-ONE | | ||
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HB12产品属性
- 类型
描述
- 型号
HB12
- 制造商
G & J HALL
- 功能描述
HANDIBURR RETHREADER M4.0
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
2016+ |
TSSOP14 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI/德州仪器 |
25+ |
TSSOP14 |
32360 |
TI/德州仪器全新特价SN74AHCT125PWR即刻询购立享优惠#长期有货 |
|||
TI |
25+ |
6000 |
原装现货,特价销售 |
||||
TI |
24+/25+ |
3940 |
原装正品现货库存价优 |
||||
TI/德州仪器 |
23+ |
TSSOP14 |
3500 |
原装正品假一罚百!可开增票! |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
TI |
22+ |
14TSSOP |
9000 |
原厂渠道,现货配单 |
|||
TI(德州仪器) |
2021+ |
TSSOP-14 |
499 |
||||
TI/德州仪器 |
2450+ |
TSSOP14 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
25+ |
TSSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
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2019-3-7
DdatasheetPDF页码索引
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