Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

Customer Specifications

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.005 2) Braid Data a) Nominal ID 5/32 (.156) b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage 95 e) Total Number of Ends 240 f) Approx. Equiv. AWG 12

USB to 16-Port RS-232, RS-485 RJ45 VersaCom Serial Interface Adapter

Features • Compliant with RoHS and WEEE directives • Utilizes high-speed UARTs with 128-byte Tx FIFOs and 384-byte Rx FIFOs • Supports front or rear rack mounting or desktop use • Provides 16 RJ45 serial ports with Tx/Rx status LEDs • VersaCom design allows RS-232 or two-wire RS-485 selectio

Snap Bushings

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Using the STPM01 with a shunt current sensor

文件：59.72 Kbytes Page：5 Pages

Li-Ion Power Gauge??Module with Pack Supervisor

文件：899.11 Kbytes Page：9 Pages