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Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

RENESAS

瑞萨

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

RENESAS

瑞萨

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel Power MOS FET High Speed Power Switching

文件:108.95 Kbytes Page:9 Pages

RENESAS

瑞萨

Dual Balanced Modulator IC

■ Overview The AN2020S is an integrated circuit which incorporates two balanced modulators. It can be used for a video-frequency-band dual amplifier, variable gain amplifier, balanced modulator, demodulator, etc. ■ Features • Low voltage operation:4.8V(typ.) • Carrier suppression:–43dB(typ.)

PANASONIC

松下

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

MOSPEC

统懋

HAT2020产品属性

  • 类型

    描述

  • 封装类型:

    SOP8

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    30

  • ID (A):

    8

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    50

  • RDS (ON)(mΩ) 最大值@10V或8V:

    28

  • Ciss (pF) 典型值:

    780

  • Vgs (off) (V) 最大值:

    2

  • VGSS (V):

    20

  • Pch (W):

    2.5

  • 应用:

    Industrial

  • 安装类型:

    Surface Mount

  • 订购条件:

    Large order only

更新时间:2026-5-24 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2016+
SOP8
3000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS/瑞萨
2023+
SOP8
1159
十五年行业诚信经营,专注全新正品
RENESAS
25+23+
SOP8
13875
绝对原装正品全新进口深圳现货
HIT
25+
SOP-8
3200
全新原装、诚信经营、公司现货销售
HIT
24+
SOP
1476
HITACHI/日立
2402+
SOP
8324
原装正品!实单价优!
HITACHI/日立
26+
Sot-153
86720
全新原装正品价格最实惠 假一赔百
HIT
23+
SOP
5000
原装正品,假一罚十
RENESAS/瑞萨
24+
SOP8
9600
原装现货,优势供应,支持实单!
HITACHI
97
SOP8
628
原装现货

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