1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Operation THB-80 (HV-H3TRB) • Low Inductance Design Optimized for SiC • Ultra Low Loss, High-Frequency Operation • Normally-off, Fail-safe Devi

1200 V, 530 A All-Silicon Carbide Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 530 A System Benefits • Lightweight, Comp

1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss , High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Applications • Inducti

Half Bridge SiC MOSFET Module

FEATURES · 175°C maximum junction temperature · Zero Reverse Recovery from Diodes · 62mm half bridge module APPLICATIONS · Motor Drives · Vehicle Fast Chargers · Renewable energy · UPS