Low-Cost Hall-Effect Sensor Family

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Hall-Effect Switch IC Family

Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall vol

Hall-Effect Switch IC Family

Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall vol

为白色家电和工业应用设计的活儿开关系列产品

HAL1xy开关系列是为家用电器盒工业应用设计的。传感器系以CMOS技术生产，它包含一个主动偏置补偿的温度补偿霍尔片，一个比较器，和一个开漏输出晶体管。比较器会通过霍尔片（霍尔电压）比较实际的磁通量和设定的参考值（开关点）。相应地，输出晶体管打开或者关闭。主动偏置补偿使得磁参数对机械应力效应下保持稳定可靠。此外，磁参数在全电压和全温度下都是持续的。HAL1xy系列产品有SOT89B SMD和TO92UA两种封装。     框图 － 系统架构 霍尔效应传感器是一个感应磁场而开关的单片集成电路。如果磁通线垂直于感应区域的磁场靠近传感器，霍尔片会按比例输出电压。霍尔电压就和比较器里的实际阀值进 ·Temperature ranges: C (Commercial, TJ = 0 °C to 85 °C) I (Industrial, TJ = –20 °C to 125 °C)\n·Operates from 3.8 V to 24 V supply voltage\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n· Reverse-voltage protection at VDD pin\n·M;

为白色家电和工业应用设计的活儿开关系列产品

HAL1xy开关系列是为家用电器盒工业应用设计的。传感器系以CMOS技术生产，它包含一个主动偏置补偿的温度补偿霍尔片，一个比较器，和一个开漏输出晶体管。比较器会通过霍尔片（霍尔电压）比较实际的磁通量和设定的参考值（开关点）。相应地，输出晶体管打开或者关闭。主动偏置补偿使得磁参数对机械应力效应下保持稳定可靠。此外，磁参数在全电压和全温度下都是持续的。HAL1xy系列产品有SOT89B SMD和TO92UA两种封装。     框图 － 系统架构 霍尔效应传感器是一个感应磁场而开关的单片集成电路。如果磁通线垂直于感应区域的磁场靠近传感器，霍尔片会按比例输出电压。霍尔电压就和比较器里的实际阀值进 ·Temperature ranges: C (Commercial, TJ = 0 °C to 85 °C) I (Industrial, TJ = –20 °C to 125 °C)\n·Operates from 3.8 V to 24 V supply voltage\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n· Reverse-voltage protection at VDD pin\n·M;

为白色家电和工业应用设计的活儿开关系列产品

HAL1xy开关系列是为家用电器盒工业应用设计的。传感器系以CMOS技术生产，它包含一个主动偏置补偿的温度补偿霍尔片，一个比较器，和一个开漏输出晶体管。比较器会通过霍尔片（霍尔电压）比较实际的磁通量和设定的参考值（开关点）。相应地，输出晶体管打开或者关闭。主动偏置补偿使得磁参数对机械应力效应下保持稳定可靠。此外，磁参数在全电压和全温度下都是持续的。HAL1xy系列产品有SOT89B SMD和TO92UA两种封装。     框图 － 系统架构 霍尔效应传感器是一个感应磁场而开关的单片集成电路。如果磁通线垂直于感应区域的磁场靠近传感器，霍尔片会按比例输出电压。霍尔电压就和比较器里的实际阀值进 ·Temperature ranges: C (Commercial, TJ = 0 °C to 85 °C) I (Industrial, TJ = –20 °C to 125 °C)\n·Operates from 3.8 V to 24 V supply voltage\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n· Reverse-voltage protection at VDD pin\n·M;

Hall-Effect Switch IC Family

Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall vol

Hall-Effect Switch IC Family

Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall vol

封装/外壳：TO-226-3，TO-92-3 短体 功能：卡销 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAGNETIC SWITCH LATCH TO92UA-6 传感器，变送器 磁性传感器 - 开关（固态）

封装/外壳：TO-243AA，变式 功能：卡销 包装：带盒（TB） 描述：MAGNETIC SWITCH LATCH SOT89B-3 传感器，变送器 磁性传感器 - 开关（固态）

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

Negative Regulator

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