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HAF价格
参考价格：￥95.4583
型号：HAF10L 品牌：TDK-Lambda 备注：这里有HAF多少钱，2024年最近7天走势，今日出价，今日竞价，HAF批发/采购报价，HAF行情走势销售排行榜，HAF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HAF | HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS: HAF SERIES-HIGH ACCURACY 文件：582.94 Kbytes Page：6 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |  |   |
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | HitachiHitachi, Ltd. 日立公司 |  | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1008 to 1512W Power Factor Correction Module Features •SuitableForDevelopingCustomSupplies •Upto96.5Efficient •CompactFullBrickPackage(116.8x61x12.7mm) •Upto100°CRatedBaseplateTemperature •ConductionCooledViaBaseplate Benefits •ModuleSolutionReducesRisk,TimeandCost •LessWasteHeattoManageand | TDKTDK Corporation 东电化（中国）投资有限公司 |  | | |
1008 to 1512W Power Factor Correction Module Features •SuitableForDevelopingCustomSupplies •Upto96.5Efficient •CompactFullBrickPackage(116.8x61x12.7mm) •Upto100°CRatedBaseplateTemperature •ConductionCooledViaBaseplate Benefits •ModuleSolutionReducesRisk,TimeandCost •LessWasteHeattoManageand | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
1008 to 1512W Power Factor Correction Module Features •SuitableForDevelopingCustomSupplies •Upto96.5Efficient •CompactFullBrickPackage(116.8x61x12.7mm) •Upto100°CRatedBaseplateTemperature •ConductionCooledViaBaseplate Benefits •ModuleSolutionReducesRisk,TimeandCost •LessWasteHeattoManageand | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpow | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpow | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SILICON N CHANNEL MOSFET SERIES POWER SWITCHING ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | | | |
Silicon N Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel Power MOSFET Power Switching Descriptions ThisFEThastheovertemperatureshutdowncapabilitysensingthejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshutdowncircuitinthegatearea.Andthiscircuitoperationtoshutdownthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpower | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel Power MOSFET Power Switching Descriptions ThisFEThastheovertemperatureshutdowncapabilitysensingthejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshutdowncircuitinthegatearea.Andthiscircuitoperationtoshutdownthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpower | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel Power MOSFET Power Switching Descriptions ThisFEThastheovertemperatureshutdowncapabilitysensingthejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshutdowncircuitinthegatearea.Andthiscircuitoperationtoshutdownthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpower | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Silicon N Channel Power MOSFET Power Switching Descriptions ThisFEThastheovertemperatureshutdowncapabilitysensingthejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshutdowncircuitinthegatearea.Andthiscircuitoperationtoshutdownthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpower | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
HAF产品属性
- 类型
描述
- 型号
HAF
- 制造商
HONEYWELL
- 制造商全称
Honeywell Solid State Electronics Center
- 功能描述
HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
7 |
2600 |
全新原装进口自己库存优势 |
||||
瑞萨电子 | Renesas |
21+ |
SOP-8 |
4550 |
全新原装现货 |
|||
RENESAS |
23+ |
20000 |
全新原装假一赔十 |
||||
RENESAS |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
23+ |
SOT263 |
6000 |
原装正品，支持实单 |
|||
VBsemi(微碧) |
24+ |
TO-252 |
5000 |
诚信服务,绝对原装原盘。 |
|||
RENESAS/瑞萨 |
24+ |
TO252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
HONEYWELL/霍尼韦尔 |
22+ |
原厂原封 |
12315 |
只做原装现货 提供一站式配套供货 中利达 |
|||
RENESAS |
23+ |
SOT263 |
3200 |
全新原装、诚信经营、公司现货销售 |
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- HAE200W
- HAE200
- HAE152
- HAE103
- HAE102
- HAE100
- HAE04107
- HADS0008
- HAD826
- HAD825
- HAD15-0.4-AG
- HAD12-0.4-AG
- HAD12-0.4-A+G
- HAD.B.10
- HAD.A.10
- HACS0001
- HACHIKO
- HA-C60
- HAC500P
- HA-C50
- HA-C5
- HAC400-S
- HAC400P
- HAC3265
- HAC301P
- HAC300S
- HAC2714
- HAC2712
- HA-C20V
- HA-C20
- HA-C2
- HA-C10
- HA-C1
- HAC0251S4-000U-999
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