1.1 - 1.7 GHz Low Noise Amplifier

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500M高速宽带运算放大器

500M高速运算放大器

HA1002E型500M高速宽带运算放大器是由深圳市乾鸿微电子有限公司自主设计，并基于国内代工厂工艺流片的模拟集成电路。该芯片是一款高速电压反馈CMOS 运算放大器，适用于中视频应用和其他需要高带宽的应用场合；CMOS输入级的高输入阻抗以及宽带、低噪声特性使得该芯片同样适用作于光敏二极管TIA放大器。此外，该芯片还具备单位增益稳定、支持单电源供电及轨到轨输出等特性。该产品采用塑封SOT23-5或SOP8封装，工业级，工作温度范围为-40℃~125℃。

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp