型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N-Channel MOSFET High-Speed Power Switching

Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive

RENESAS

瑞萨

Silicon N-Channel MOSFET High-Speed Power Switching

Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on)=25 mΩ typ. • Low drive current • Available for 4.5 V gate drive

RENESAS

瑞萨

Silicon N-Channel MOSFET High-Speed Power Switching

Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive

RENESAS

瑞萨

Silicon N-Channel MOSFET High-Speed Power Switching

Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive

RENESAS

瑞萨

H7N1004DS产品属性

  • 类型

    描述

  • 型号

    H7N1004DS

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Bulk

更新时间:2025-10-19 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
TO220F
8000
原装正品支持实单
VBsemi
23+
TO252
10065
原装正品,有挂有货,假一赔十
VBsemi
24+
TO220
5000
全新原装正品,现货销售
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESASELECTRONICS
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
RENESAS
24+
TO-220属封
16900
原装正品现货支持实单
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
R
22+
TO-252
6000
十年配单,只做原装
RENESAS
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。

H7N1004DS数据表相关新闻