位置：首页 > IC中文资料第7196页 > H7N0310LSTL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H7N0310LSTL-E | Silicon N Channel MOS FET High Speed Power Switching 文件：105.14 Kbytes Page：8 Pages | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：105.14 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：105.14 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：105.14 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
H7N0310LSTL-E产品属性
- 类型
描述
- 型号
H7N0310LSTL-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-252 |
50641 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS/瑞萨 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
瑞萨RENESA |
23+ |
LDPAK(S) |
15000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS |
TO-220 |
67430 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
300000 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
60000 |
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DdatasheetPDF页码索引
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