型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

更新时间:2025-10-18 18:14:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
23+
TO-220
10065
原装正品,有挂有货,假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
20+
TO-220
300000
现货很近!原厂很远!只做原装
RENESAS
24+
TO-220
16900
原装正品现货支持实单
HITACHI
24+
TO263
65200
一级代理/放心采购
NEC
23+
TO-220
42733
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS/瑞萨
2022+
TO-220
2000
原厂代理 终端免费提供样品
RENESAS
2511
TO-220
50
电子元器件采购降本30%!原厂直采,砍掉中间差价

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