型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LM

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0307LM

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LM产品属性

  • 类型

    描述

  • 型号

    H7N0307LM

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-10-19 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
RENESAS
2511
TO-252
50
电子元器件采购降本30%!原厂直采,砍掉中间差价
HIT/日立
23+
SOT-263
691878
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS
23+
TO-252
48281
##公司主营品牌长期供应100%原装现货可含税提供技术
HIT/日立
23+24
SOT263
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
HITACHI
24+
TO263
65200
一级代理/放心采购
NK/南科功率
2025+
TO-263
986966
国产
HITACHI
24+
TO263
5200
只做原装正品现货 欢迎来电查询15919825718
HIT/日立
SOT-263
6911
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

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