丝印代码：H4015S；P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Backlighting Features and

发光二极管/LED

发光二极管/LED

包装：散装 描述：LED ASSY RA 3MM 4X1 BLUE DIFF 光电器件 LED - 电路板指示器，阵列，发光条，条形图

包装：散装 描述：LED ASSY RA 3MM 4X1 GREEN DIFF 光电器件 LED - 电路板指示器，阵列，发光条，条形图

发光二极管/LED

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages