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型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

更新时间:2026-3-18 10:12:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2025+
TO-220AB
3577
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24+
N/A
54000
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ONSemiconductor
24+
NA
3000
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MOT
25+
QFP
3200
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原装ON
24+
TO-220
63200
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ON
24+
TO-2203LEADSTANDA
8866
ON
20+
38500
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ON(安森美)
24+
*
25836
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ON Semiconductor
2022+
1
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ON/安森美
23+
TO-220
50000
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