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H2N6426

NPN EPITAXIAL PLANAR TRANSISTOR

Description Darlington Transistor

HSMC

华昕

NPN Darlington Transistor

This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

FAIRCHILD

仙童半导体

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

ONSEMI

安森美半导体

Darlington Transistors

文件:111.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

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